In this paper. the performance of tunnel field-effect transistors (TFETs) based on 2-D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2-D material-based TFETs can have tight gate control and high electric fields at the tunnel junction. https://www.ealisboa.com/best-grab-Chocolate-Chip-Cookie-Purse-Spray-mega-super/